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Загальна кількість знайдених документів : 719
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| 1. | ІВ198746 Ashruf C. M. Galvanic etching of silicon for fabrication of micromechanical structures [Текст] : Diss. / C. M. Ashruf ; Technische Universiteit Delft. - Delft : [б.в.], 2000. - 158 p.: fig.
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| 2. | ІВ215253 Baker R. J. CMOS [Текст] : circuit design, layout, and simulation / R. Jacob Baker. - Hoboken, New Jersey : John Wiley & Sons : Wiley-Interscience, 2008. - XXXI, 1038 p. : fig. - (IEEE press)
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| 3. | MFI5463/1-3 Brenna G. The design of direct-conversion CMOS radio transmitters [Текст] : Diss. / G. Brenna ; Swiss Federal institute of technology Zürich. - Zürich : [б.в.], 2004. - 177 p. - (ETH-Diss ; 15495)
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| 4. | MFI5804/1-4 Burg A. VLSI circuits for MIMO communication systems [Текст] : Diss. / A. Burg ; Swiss Federal institute of technology Zürich. - Zürich : [б.в.], 2006. - 237 p.
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| 5. | MFI3726/1-2 Bühler J. Deformable micromirror arrays by CMOS technology [Текст] : Diss. / J. Bühler ; Swiss Federal institute of technology Zürich. - Zürich : [б.в.], 1997. - 127 p.: fig. - (Diss ETH ; 12139)
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| 6. | ІВ213533 Carballo J. A. Chip design for non-designers [Текст] : an introduction / Juan-Antonio Carballo. - Tulsa, Oklahoma : PennWell, 2008. - 162 p. : fig.
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| 7. | ІВ197694 Czarczyński W. Mikroelektronika próżniowa [Текст] / W. Czarczyński. - Wrocław : Oficyna Wydawnicza Politechniki Wrocławskiej, 2000. - 166 s.: rys.
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| 8. | ІВ200600 Do T. Pipelining zur Steigerung der Effizienz von rechenintensiven Algorithmen auf Look-up-Table-basierten FPGAs [Текст] : Diss. / T. Do ; Universität Hannover. Fachbereich Elektrotechnik und Informationstechnik. - Hannover : [б.в.], 2001. - 132 S.: Abb.
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| 9. | MFI4085/1-2 Doswald D. Realization of complex microsystems using custom microelectronics and standard components [Текст] : Diss. / D. Doswald ; Swiss Federal institute of technology Zürich. - Zürich : [б.в.], 2000. - 147 p.: fig. - (Diss ETH ; 13664)
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| 10. | MFI5800/1-4 ETherton M. Charged device model (CDM) ESD in ICs [Текст] : Diss. / M. ETherton ; Swiss Federal institute of technology Zürich. - Zürich : [б.в.], 2006. - 235 p. - (ETH-Diss ; 16354)
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| 11. | ІВ203737 Ewler T. Elektrostatische Beeinflussung von integrierten Schaltungen bei der automatischen Bauteilzuführung [Текст] : Diss. / T. Ewler ; Universität Hannover. Fachbereich Elektrotechnik. - Hannover : [б.в.], 1997. - X, 147 S.: Bild.
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| 12. | ІВ215240 Fabrication of SiGe HBT BiCMOS technology [Текст] / ed. by John D. Cressler. - Boca Raton : CRC press Taylor&Francis group, 2008. - XVI, 14-16, A.4-10, I-7 p. : fig.
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| 13. | ІВ219761 Future trends in microelectronics [Текст] : the Nano, the Giga, and the Ultra / ed. by Serge Luryi, Jimmy Xu, Alex Zaslavsky. - New York : IEE ; Hoboken, New Jersey : Wiley-Interscience, 2004. - XIII, 408 p. : fig., tab.
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| 14. | MFI4093/1-2 Gamper E. T. Realisation of integrated electro-optical and all-optical Mach-Zehnder devices based on indium-phosphide [Текст] : Diss. / E. T. Gamper ; Swiss Federal Institute of technology Zürich. - Zürich : [б.в.], 2000. - 156 p.: fig. - (ETH-DISS ; 13641)
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| 15. | ІВ207824 Geier J. Wireless networks first-step [Текст] / J. Geier. - Indianapolis : Cisco press, 2005. - XX, 238 p.: fig.
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| 16. | ІВ200342 Golonka L. Zastosowanie ceramiki LTCC w mikroelektronice [Текст] / L. Golonka. - Wrocław : Oficyna Wydawnicza Politechniki Wrocławskiej, 2001. - 136 s.: rys.
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| 17. | MFI3477/1-2 Gull R. D. TCAD based development of a polysilicon emitter transistor in a BiCMOS technology [Текст] : Diss. / R. D. Gull ; Swiss Federal institute of technology Zürich. - Zürich : [б.в.], 1996. - 135 p.: fig. - (Diss ETH ; 11757)
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| 18. | MFI3632/1-2 Haberli A. M. Compensation and calibration of IC microsensors [Текст] : Diss. / A. M. Haberli ; Swiss Federal institute of technology Zürich. - Zürich : [б.в.], 1997. - 146 p.: fig. - (Diss ETH ; 12090)
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| 19. | ІВ193947 Harper C. A. Electronic packaging, microelectronics, and interconnection dictionary [Текст] / C. A. Harper, M. B. Miller. - New York[etc.] : McGraw-Hill, 1993. - VII, 235 p. - (Electronic packaging and interconnection series)
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| 20. | ІВ213706 Hinz J. Abscheidung und Characterisierung metallischer Gateelektroden für für zukünftige CMOS-Technologien [Текст] : Diss. / Jörn Hinz ; Techn. Fak. der Friedrich-Alexander-Univ. Erlangen-Nürnberg. - Erlangen-Nürnberg : [s. n.], 2010. - VI, 129 S. : Abb.
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