Пошуковий запит: (<.>A=Datsenko L$<.>) |
Загальна кількість знайдених документів : 9
Представлено документи з 1 до 9
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| 1. | Ж16425 Klad'ko V. P. Influence of absorption level on mechanisms of Bragg-diffracted x-ray beam formation in real silicon crystals [Текст] 2: 1 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.-С.157-162
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| 2. | Ж14161 Grigoriev D. Energy-dispersive studies of the integrated reflectivity of bragg diffracted continuous X-ray spectrum for high-sensitive structure diagnostics of imperfect single crystal [Текст] 22: 5 // Металлофизика и новейшие технологии.-С.33-41
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| 3. | Ж16425 Datsenko L. I. Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing [Текст] 2: 1 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.-С.56-61
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| 4. | Ж14161 Klad'ko V. P. Effect of structure perfection of polar crystals on Friedel intensity ratio for X-ray reflections in the region of resonant frequencies [Текст] 23: 12 // Металлофизика и новейшие технологии.-С.1595-1605
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| 5. | Ж26988 Klad'ko V. P. Investigation of GaAs/AlAs short-periodic superlattices by high-resolution X-ray diffractometry [Текст] 49: 1 // Укр. фіз. журн.-С.79-84
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| 6. | Ж16425 Klad'ko V. P. Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 3.-С.343-348
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| 7. | Ж16425 Datsenko L. I. Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2001. т.Т. 4,N № 3.-С.146-151
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| 8. | Ж16425 Seitmuratov M. S. Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2002. т.Т. 5,N № 3.-С.258-260
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| 9. | Ж16425 Kladko V. P. Investigation of superlattice structure parameters by using quasi-forbidden reflections [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2003. т.Т. 6,N № 3.-С.392-396
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