Пошуковий запит: (<.>A=KAPITAN$<.>+<.>A=TETJANA$<.>+<.>A=VOLODYMYRIVNA$<.>) |
Загальна кількість знайдених документів : 26
Представлено документи з 1 до 20
|
| |
1. | Ж70861 Kulyk M. S. Gas ejector as a pressure stabilizer at the inlet to compressor power installation [Текст]: 2 // Вісн. Нац. авіац. ун-ту.-С.29-33
|
2. | Ж14063 Kuprievich V. A. The distribution of field-induced charges in C60 fullerite [Текст] 32: 1 // Физика низ. температур.-С.125-128
|
3. | Ж16425 Boltovets N. S. Ohmic contacts to Hall sensors based on n-InSb - GaAs(i) heterostructures [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2006. т.Т. 9,N № 2.-С.58-60
|
4. | Ж16425 Belyaev A. E. Development of high-stable contact systems to gallium nitride microwave diodes [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2007. т.Т. 10,N № 4.-С.1-8
|
5. | Ж16425 Belyaev A. E. The features of temperature dependence of contact resistivity of Au - Ti - Pd2Si - <$E bold p sup +>-Si ohmic contacts [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2010. т.Т. 13,N № 1.-С.8-11
|
6. | Ж16425 Sachenko A. V. Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2012. т.Т. 15,N № 4.-С.351-357
|
7. | Ж16425 Belyaev A. E. Role of dislocations in formation of ohmic contacts to heavily doped n-Si [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2013. т.Т. 16,N № 2.-С.99-110
|
8. | Ж16425 Sachenko A. V. Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-<$E bold n sup +>-GaN ohmic contacts [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2013. т.Т. 16,N № 4.-С.313-321
|
9. | Ж41115 Len T. A. Thermoexfoliated graphite - transitional metal nanocomposites [] // Functional Materials, 2004. т.Т. 11,N № 3.-С.551-555
|
10. | Ж41115 Vovchenko L. L. Thermomagnetic studies of thermoexfoliated graphite-transition metal composites [] // Functional Materials, 2007. т.Т. 14,N № 3.-С.378-381
|
11. | Ж100357 Kapitan V. Yu. Labyrinth domain structure in the models with long-range interaction [] // Журнал нано- та електронної фізики, 2014. т.Т. 6,N № 3.-С.03005-1-03005-4
|
12. | Ж26988 Teslenko V. I. Fractional cooperativity of a few-state system in the environment [] // Український фізичний журнал, 2015. т.Т. 60,N № 11.-С.1165-1179
|
13. | Ж100357 Kapitan V. Yu. High-performance Monte Carlo simulation of multilayer magnetic films [] // Журнал нано- та електронної фізики, 2017. т.Т. 9,N № 5.-С.05015-1-05015-4
|
14. | Ж16425 Bacherikov Yu. Yu. Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2017. т.Т. 20,N № 4.-С.465-469
|
15. | Ж16425 Bacherikov Yu. Yu. Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2018. т.Т. 21,N № 2.-С.200-205
|
16. | Ж16425 Bacherikov Yu. Yu. Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2018. т.Т. 21,N № 4.-С.360-364
|
17. | Ж41115 Nakonechna O. Effect of the carbon nanotubes on mechanochemical synthesis of the Fe - TiC nanocomposite [] // Functional Materials, 2019. т.Т. 26,N № 2.-С.358-365
|
18. | Ж70861 Kapitanchuk K. Finite difference method for calculating of the gas flow in a subsonic gas ejector [] // Вісник Національного авіаційного університету, 2015. т.Т. 65,N № 4.-С.55-60
|
19. | Ж24320 Pospelov B. Development of the correlation method for operative detection of recurrent states [] // Восточно-Европейский журнал передовых технологий, 2019,N № 6/4.-С.39-46
|
20. | Ж21854 Popov A. F. Reactivity of nucleophiles and <$E bold alpha>-effect in substitution processes at electron-deficiency centers (pt. 1) [] // Укр. хім. журн, 2020. т.Т. 86,N № 7/8.-С.3-31
|
| |