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Загальна кількість знайдених документів : 55
Представлено документи з 1 до 20
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| 1. | Ж16425 Gorban A. P. Efficiency limit for diffusion silicon solar cells at concentrated illumination [Текст] 2: 2 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.-С.45-49
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| 2. | Ж16425 Sachenko A. V. On the collection of photocurrent in solar cells with a contact grid [Текст] 2: 2 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.-С.42-44
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| 3. | Ж26988 Gorban A. P. Impact of excess charge carrier concentration on effective surface recombination velocity in silicon photovoltaic structures [Текст] 51: 6 // Укр. фіз. журн.-С.598-604
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| 4. | Ж26988 Sachenko A. V. Interpretation of exciton photoluminescence spectra in films with silicon quantum dots [Текст] 51: 8 // Укр. фіз. журн.-С.800-804
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| 5. | Ж15477 Roth H. The 3D mapping preparation using 2D/3D cameras for mobile robot control [Текст]: 4 // Искусств. интеллект.-С.512-521
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| 6. | Ж100480 Karachevtseva L. A. Photoeffect peculiarities in macroporous silicon structures [Текст] 1: 1 // Хімія, фізика та технологія поверхні.-С.87-93
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| 7. | Ж26988 Kostylyov V. P. Influence of surface centers on the effective surface recombination rate and the parameters of silicon solar cells [] // Український фізичний журнал, 2013. т.Т. 58,N № 4.-С.362-369
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| 8. | Ж16425 Sachenko A. V. Evaluation of the efficiency of interband radiative recombination in high quality Si [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 1999. т.Т. 2,N № 4.-С.55-60
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| 9. | Ж16425 Sachenko A. V. Conversion efficiency in silicon solar cells with spatially non-uniform doping [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 1999. т.Т. 2,N № 3.-С.32-37
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| 10. | Ж16425 Gorban A. P. Effect of emitter properties on the conversion efficiency of silicon solar cells [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 1999. т.Т. 2,N № 3.-С.26-31
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| 11. | Ж16425 Gorban A. P. Effect of excitons on photoconversion efficiency in the p+-n-n+- and n+-p-p+-structures based on single-crystalline silicon [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 3.-С.322-329
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| 12. | Ж16425 Sachenko A. V. Exciton-enhanced recombination in silicon at high concentrations of charge carriers [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 1.-С.5-10
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| 13. | Ж16425 Sachenko A. V. A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2003. т.Т. 6,N № 4.-С.487-491
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| 14. | Ж16425 Korbutyak D. V. Characteristics of confined exciton states in silicon quantum wires [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2003. т.Т. 6,N № 2.-С.172-182
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| 15. | Ж16425 Sachenko A. V. Exciton effects in band-edge electroluminescence of silicon barrier structures [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2004. т.Т. 7,N № 1.-С.1-7
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| 16. | Ж16425 Dmitruk N. L. Investigation of the effect of external factors (heating, exposition to radiation) on the electrophysical parameters of barrier heterostructures p-AlGaAs-p-GaAs-n-GaAs [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2005. т.Т. 8,N № 1.-С.46-52
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| 17. | Ж16425 Dmitruk N. L. Experimental study and theoretical analysis of photoelectric characteristics of <$E bold {{roman Al} sub x {roman Ga} sub 1-x {roman As}~-~p-{roman GaAs}~-~n-{roman GaAs}}>-based photoconverters with relief interfaces [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2005. т.Т. 8,N № 1.-С.72-78
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| 18. | Ж16425 Sachenko A. V. Modeling of photoconversion efficiency for hydrogenated amorphous Si p - i - n structures [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2007. т.Т. 10,N № 4.-С.60-66
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| 19. | Ж16425 Ivanov V. I. Photoconductivity in macroporous silicon with regular structure of macropores [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2007. т.Т. 10,N № 4.-С.72-76
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| 20. | Ж16425 Sachenko A. V. Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2008. т.Т. 11,N № 1.-С.1-5
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