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1. | Ж41115 Nevolin V. S. Some peculiarities of electrophysical characteristics of Si - YBa2Cu3O7 contacts: a possible energy structure of metal oxide ceramics [] // Functional Materials, 2000. т.Т. 7,N № 2.-С.246-250
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2. | Ж26988 Ivanov I. I. Numerical simulation of the photocurrent in the thin metal - silicon structures with quantum wells [Текст] 49: 9 // Укр. фіз. журн.-С.917-920
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3. | Ж67522 Skryshevsky V. A. Gas sensing properties of metal-nanocrystalline silicon-silicon heterostructures [Текст]: Вып. 13 // Фотоэлектроника: Межвед. науч. сб.-С.25-29
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4. | Ж16425 Brodovoy A. V. Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2006. т.Т. 9,N № 4.-С.26-30
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5. | Ж26988 Skryshevsky V. A. The influence of adsorption of alcohol and water vapors on currents of a MIS structure with an intermediate layer of porous silicon [Текст] 51: 5 // Укр. фіз. журн.-С.460-466
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6. | Ж26988 Kozinets A. V. Influence of the magnetic field on the photocurrent through silicon - porous silicon heterostructures [Текст] 51: 6 // Укр. фіз. журн.-С.574-579
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7. | Ж24835 Benilov A. I. Impact of gas adsorption and pH of solutions on radiative lifetime of modified porous silicon layers [Текст]: 2 // Сенсор. електрон. і мікросистем. технології.-С.35-40
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8. | Ж24835 Skryshevsky V. A. Improved hydrogen detection of island type palladium film - nanoporous silicon diode at room temperature [Текст]: 2 // Сенсор. електрон. і мікросистем. технології.-С.21-27
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9. | Ж16425 Ivanov I. I. Thin silicon solar cells with SiOx/SiNx Bragg mirror rear surface reflector [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2009. т.Т. 12,N № 4.-С.406-411
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10. | Ж16425 Manilov A. I. Electrophysical properties of meso-porous silicon free standing films modified with palladium [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2011. т.Т. 14,N № 1.-С.1-6
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11. | Ж41115 Karlash A. Yu. Impedance spectroscopy of composites based on porous silicon and silica aerogel for sensor applications [] // Functional Materials, 2013. т.Т. 20,N № 1.-С.68-74
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12. | Ж14252 Tsymbaliuk O. V. Histamine- and nicotine-stimulated modulations of mechanic activity of smooth muscles in gastrointestinal tract at the impact of nanosized TiO2 material [] // Biopolymers and Cell, 2016. т.Т. 32,N № 2.-С.140-149
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13. | Ж100357 Skryshevsky V. A. Memristor effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni heterojunctions [] // Журнал нано- та електронної фізики, 2017. т.Т. 9,N № 1.-С.01023-1-01023-3
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14. | Ж100357 Skryshevsky V. A. Memristor effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni heterojunctions [] // Журнал нано- та електронної фізики, 2017. т.Т. 9,N № 1.-С.01023-1-01023-3
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15. | Ж100193 Naumenko A. M. Nanosized titanium dioxide material. Modulation of spontaneous motility and GABA-dependent regulation of functions of stomach smooth muscles in vivo [] // Біологічні студії, 2017. т.Т. 11,N № 1.-С.5-16
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16. | Ж26988 Kozinetz A. V. Amorphous submicron layer in depletion region: new approach to increase the silicon solar cell efficiency [] // Український фізичний журнал, 2018. т.Т. 63,N № 1.-С.37-47
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17. | Ж16425 Slobodian O. M. Reduced graphene oxide obtained using the spray pyrolysis technique for gas sensing [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2019. т.Т. 22,N № 1.-С.98-103
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18. | Ж100357 Kozinets A. V. Deep silicon barrier structure as chemical sensor for detection of hydrochloric Acid Salt solutions [] // J. of Nano- and Electronic Physics, 2020. т.Т. 12,N № 3.-С.03015-1-03015-5
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19. | Ж100357 Gavrilchenko I. V. Luminescent properties of electrochemically etched gallium arsenide [] / I. V. Gavrilchenko, Y. S. Milovanov [et al.] // J. of Nano- and Electronic Physics, 2021. т.Т. 13,N № 4.-С.04011-1-04011-6
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20. | Ж100357 Skryshevsky V. A. Application of harmonic analysis and principal component analysis for discrimination of adsorbates in gas-sensitive ITO/nanostructured TiO2 heterojunction [] / V. A. Skryshevsky, O. M. Kostiukevych, I. I. Ivanov // J. of Nano- and Electronic Physics, 2022. т.Т. 14,N № 1.-С.01005-1-01005-5
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