Пошуковий запит: (<.>A=Yukhymchuk V$<.>) |
Загальна кількість знайдених документів : 37
Представлено документи з 1 до 20
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| 1. | Ж26988 Bratus' V. Ya. EPR and optical study of SiO2 films implanted with germanium ions [Текст] 50: 6 // Укр. фіз. журн.-С.610-617
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| 2. | Ж26988 Valakh M. Ya. Properties and interconversion of self-induced SiGe nanoislands of different shapes [Текст] 51: 2 // Укр. фіз. журн.-С.200-206
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| 3. | Ж16425 Kunets V. P. Optical investigations of thermostimulated changes in an ensemble of CdSXSe1 - X quantum dots embedded into borosilicate glass matrix [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2001. т.Т. 4,N № 3.-С.196-198
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| 4. | Ж16425 Dzhagan V. N. Investigation of the optical and acoustical phonon modes in Si1-xGex QD SLs [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2003. т.Т. 6,N № 2.-С.164-168
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| 5. | Ж16425 Baran M. Role of silicon oxide defects in emission process of Si - SiO2 systems [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2003. т.Т. 6,N № 3.-С.282-286
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| 6. | Ж16425 Rudko G. Yu. Paramagnetic defects related to photoluminescence in SiOx films [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2004. т.Т. 7,N № 4.-С.400-403
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| 7. | Ж16425 Yukhymchuk V. O. Optical and acoustical phonon modes in superlattices with SiGe QDs [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2004. т.Т. 7,N № 4.-С.456-461
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| 8. | Ж16425 Berezhinsky L. I. Investigation of Al-ZERODUR interface by Raman and secondary ion mass-spectroscopy [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2005. т.Т. 8,N № 2.-С.37-40
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| 9. | Ж16425 Yaremko A. M. Investigation of electron-phonon interaction in bulk and nanostructured semiconductors [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2007. т.Т. 10,N № 2.-С.1-5
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| 10. | Ж16425 Nechyporuk B. D. Obtaining and optical properties of the glasses of the GeS2 - HgS system [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2007. т.Т. 10,N № 3.-С.65-69
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| 11. | Ж16425 Kiselov V. S. Effect of Si infiltration method on the properties of biomorphous SiC [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2009. т.Т. 12,N № 1.-С.68-71
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| 12. | Ж16425 Kiselov V. S. Simple method for SiC nanowires fabrication [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2011. т.Т. 14,N № 1.-С.7-11
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| 13. | Ж16425 Bratus' O. L. Structural properties of nanocomposite SiO2(Si) films obtained by ion-plasma sputtering and thermal annealing [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2011. т.Т. 14,N № 2.-С.247-255
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| 14. | Ж16425 Yukhymchuk V. O. SERS of Rhodamine 6G on substrates with laterally ordered and random gold nanoislands [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2012. т.Т. 15,N № 3.-С.232-238
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| 15. | Ж26988 Rudenko R. M. Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin [] // Український фізичний журнал, 2013. т.Т. 58,N № 8.-С.769-772
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| 16. | Ж26988 Neimash V. B. Microstructure of thin Si - Sn composite films [] // Український фізичний журнал, 2013. т.Т. 58,N № 9.-С.865-871
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| 17. | Ж16425 Neimash V. B. Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2013. т.Т. 16,N № 4.-С.331-335
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| 18. | Ж41115 Valakh M. Ya. Strain relaxation in thin <$E bold {{roman Si} sub 1-x-y {roman Ge} sub x {roman C} sub y}> layers on Si substrates [] // Functional Materials, 2006. т.Т. 13,N № 1.-С.79-84
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| 19. | Ж41115 Yukhymchuk V. O. Synthesis, morphological and structural properties of bio-SiC ceramics [] // Functional Materials, 2010. т.Т. 17,N № 4.-С.520-527
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| 20. | Ж41115 Klyui M. I. Bio-SiC ceramics coated with hydroxyapatite using gas-detonation deposition: an alternative to titanium-based medical implants [] // Functional Materials, 2013. т.Т. 20,N № 2.-С.163-171
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