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Rokakh, A. G.
Influence of illumination by white light on ion etching of heterophase CdS - PbS semiconductor [Text] !Otitkn.pft: FILE NOT FOUND! !oizd.pft: FILE NOT FOUND! !ospec.pft: FILE NOT FOUND! !oistaspk_H.pft: FILE NOT FOUND! Рубрикатор НБУВ: Тематичні рубрики:
Шифр журнала:
Анотація: Polycrystalline heterophase semiconductor films CdS-PbS were exposed to ion etching with simultaneous illumination by pulses of white light. Atypical reaction of positive secondary lead ions yield to excitation by light of electron subsystem is found out at illumination. This effect speaks that the narrow-gap phase where atoms of lead are mainly concentrated, is a sink for nonequilibrium charge carriers and, hence, for excitations in the heterophase semiconductor that results in increase in the lead ions yield during illumination time. !oprip481_H.pft: FILE NOT FOUND!
Дод. точки доступу:
Zhukov, A. G.; Stetsura, S. V.; Serdobintsev, A. A.
Видання зберігається у :
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