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Misiuk, A.
Hydrogen gettering in annealed oxygen-implanted silicon [] !Otitkn.pft: FILE NOT FOUND! !oizd.pft: FILE NOT FOUND! !ospec.pft: FILE NOT FOUND! !oistaspk_H.pft: FILE NOT FOUND! Рубрикатор НБУВ: Тематичні рубрики:
Шифр журнала:
Анотація: Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by $E roman O sub 2 sup + implantation at the energy 200 keV and doses 10. 14D and 10. 17D cm. -2D) was investigated after annealing of Si:O at temperatures up to 1570 K, including also processing under enhanced hydrostatic pressure, up to 1,2 GPa. Depending on processing conditions, buried layers containing SiOV2-xD clusters and/or precipitates were formed. To produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was accumulated in sub-surface region as well as within implantation-disturbed areas. It has been found that hydrogen was still present in Si:O,H structures formed by oxygen implantation with the dose $E D~ even after post-implantation annealing up to 873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as well as in SOI structures can be used for recognition of defects. !oprip481_H.pft: FILE NOT FOUND!
Дод. точки доступу:
Barcz, A.; Ulyashin, A.; Antonova, I. V.; Prujszczyk, M.
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