We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at <$E300~symbol Р roman C> from the precursor (SnCl4, 5H2O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3,7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be <$E9,85~10 sup -5 OMEGA> cm, a high electron concentration is around 10<^>21 cm<^>-3, and the mobility reaches the value of 20 cm<^>2/Vs.

The fabrication and electrical characterization of metal phthalocyanine MPc organic diodes have been investigated. The Au / MPc / Si Schottky diodes are fabricated via a spin coating route. Based on the electrical measurement of the current versus bias voltage in dark conditions we extract the parameters such as ideality factor, saturation current, series resistance and rectifying factor. Role of metal M = Cu, Al, Zn, Mg on the electronic parameters is emphasized. The obtained values of n, 1,85, 2,22 and 4,40, show a non-ideal behavior. Using a derivate dV / dlnI and H(I) functions, we determine the ideality factor and series resistance and found to be 2 and <$E17~OMEGA> for the CuPc device.

The nanostructures of iron-doped zinc oxide (FZO) produced by a simple and low cost dip-coating route onto a glass substrate were studied. The structural, morphological, electrical and optical properties of FZO films were investigated. Nanochains were revealed by SEM analysis at high magnification. A (002)-oriented wurzite structure with a lattice parameter of <$Ealpha ~=~3,24 roman A back 45 up 35 symbol Р> and <$Ec~=~5,19~roman A back 45 up 35 symbol Р> - was confirmed by X-rays diffraction. High transmittance was exhibited in the visible spectrum, T (550 nm) >> 83 %. Finally, electrical measurements revealed a resistivity and mobility of <$E10~roman k OMEGA ~cdot~roman cm>, and 5 cm<^>2 / Vs respectively.

In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al/ZnO/p-Si/Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 50 kHz - 5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 10¹⁴ cm^-3, 0,21 to 0,45 V. Besides, the interface state density of Al/ZnO/pSi/Al Schottky is determined and found to be 10¹² (eV x cm²)^-1. Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 Å and 0,28 mu M.

The physical properties of the pure and metal doped ZnO films are investigated using a low cost dip coating technique. The films have grown slowly onto a glass substrate at room temperature. Based on X-ray pattern parameters are extracted such as gram size, lattice parameters. Optical measurements within the UV-Vis band give us the transmittance of films (> 80 %) and optical band gap. Using the Hall Effect measurement (HMS) in room temperature, we determine the bulk density of charge earners, mobility and their electrical resistivity.

This paper reports on the deposition and surface properties of the pure and doped zinc oxide layers produced by spin coating route. Pure and metallic (Al, Sn, Cd, Co) doped ZnO films are characterized by mean of atomic force microscopy (AFM). Based on atomic force microscope observation, some parameters such as grain size, height, orientation of angle and histogram are determined. The AFM scanned 2D and 3D-views permit us to discover the roughness, the average height and the skewness of clusters or grains.