This work reports on the Schottky junctions based on zinc oxide layers (grown by Atomic Layer Deposition from dimethylzinc (Zn(CH3)2) or diethylzinc (Zn(C2H5)2) and water precursors). If the strict electrical requirements (electron concentration not higher than 10<^>17 cm<^>-3 and mobility above 10 cm<^>2 V<^>-1 s<^>-1) for ZnO are fulfilled, the rectification ratio of ZnO/Ag Schottky junction as high as 10<^>3 for low forward bias (2 - 3 V) can be achieved. The ideality factor of about <$E symbol Ы~2,65> was calculated basing on the pure thermionic emission theory.

We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work.

ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n-CdS/n-CdTe/p-Cu1,8S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark current-voltage characteristics and compared with those obtained for structures with Mo contact. The advantages of ZnO electrode are discussed.

Індекс рубрикатора НБУВ: В379.271

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Шифр НБУВ: Ж16425 Пошук видання у каталогах НБУВ 
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