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А Б В Г Ґ Д Е Є Ж З И І К Л М Н О П Р С Т У Ф Х Ц Ч Ш Щ Э Ю Я

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Загальна кількість знайдених документів : 15 Представлено документи з 1 до 15
1.	Dan'ko V. A. Absorption Cross Section and Photoluminescence Lifetime of Silicon-Based Light-Emitting nc-Si-SiOx Structures [Електронний ресурс] / V. A. Dan'ko, P. E. Shepeliavyi, K. V. Michailovska, I. Z. Indutnyi // Proceedings of the International Conference Nanomaterials: Applications and Properties. - 2012. - Vol. 1, no. 3. - С. 03TF13-03TF13. - Режим доступу: http://nbuv.gov.ua/UJRN/princon_2012_1_3_15 Попередній перегляд: Завантажити - 253.897 Kb Зміст випуску Цитування
2.	Dan’ko V. A. Immersion Lithography with Using of Photostimulated Etching of Germanium Chalcogenide Films [Електронний ресурс] / V. A. Dan’ko, I. Z. Indutnyi, V. I. Myn’ko, P. E. Shepeliavyi, M. V. Lykanyuk, O. S. Litvin // Proceedings of the International Conference Nanomaterials: Applications and Properties. - 2013. - Vol. 2, no. 3. - С. 03AET03-03AET03. - Режим доступу: http://nbuv.gov.ua/UJRN/princon_2013_2_3_68 Попередній перегляд: Завантажити - 347.361 Kb Зміст випуску Цитування
3.	Dan'ko V. A. Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment [Електронний ресурс] / V. A. Dan'ko, V. Ya. Bratus', I. Z. Indutnyi, I. P. Lisovskyy, S. O. Zlobin, K. V. Michailovska, P. E. Shepeliavyi // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 4. - С. 413-417. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_4_18 Попередній перегляд: Завантажити - 1.893 Mb Зміст випуску Цитування
4.	Sopinskyy M. V. Polarization conversion effect in obliquely deposited SiOx films [Електронний ресурс] / M. V. Sopinskyy, I. Z. Indutnyi, K. V. Michailovska, P. E. Shepeliavy, V. M. Tkach // Semiconductor physics, quantum electronics & optoelectronics. - 2011. - Vol. 14, № 3. - С. 273-278. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2011_14_3_5 Structural anisotropy of the SiOx films and nc-Si - SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this purpose, a simple method of PC investigation with usage of a standard null-ellipsometer is proposed and tested. This method is based on the analysis of the azimuthal angle dependence of the off-diagonal elements of the Jones matrix. The electron microscopy study shows that obliquely deposited SiOx films have a porous (column-like) structure with the column diameter and inclination depending on the deposition angle. Polarimetric investigations revealed that both in-plane and out-of-plane anisotropy was present, which is associated with the columnar growth. The correlation between the PC manifestations and the scanning electron microscopy results is analyzed. It was found that the tilt angle of columns in obliquely deposited SiOx is smaller than that predicted by the "tangent rule" and "cosine rule" models, and depends on the crystallographic orientation of Si substrate. It is concluded that the proposed method is effective non-destructive express technique for the structural characterization of obliquely deposited films. Попередній перегляд: Завантажити - 234.687 Kb Зміст випуску Реферативна БД Цитування
5.	Dan'ko V. A. Photostimulated etching of germanium chalcogenide films [Електронний ресурс] / V. A. Dan'ko, I. Z. Indutnyi, V. I. Myn'ko, P. E. Shepeliavyi, M. V. Lukyanyuk, O. S. Litvin // Semiconductor physics, quantum electronics & optoelectronics. - 2012. - Vol. 15, № 4. - С. 345-350. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2012_15_4_10 The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge. A possible mechanism for the photoinduced etching of ChG films has been discussed. The high-frequency diffraction gratings on germanium ChG - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded using the method of interference immersion photolithography with photoinduced etching. Попередній перегляд: Завантажити - 1.645 Mb Зміст випуску Реферативна БД Цитування
6.	Michailovska K. V. Nickel-induced enhancement of photo-luminescence in nc-Si-SiOx nanostructures [Електронний ресурс] / K. V. Michailovska, I. Z. Indutnyi, P. E. Shepeliavyi, V. A. Dan'ko // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 4. - С. 336-340. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_4_6 Попередній перегляд: Завантажити - 1.377 Mb Зміст випуску Цитування
7.	Kadan V. M. Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses [Електронний ресурс] / V. M. Kadan, I. Z. Indutnyi, V. A. Dan'ko, P. E. Shepelyavyi, I. M. Dmitruk, P. I. Korenyuk, I. V. Blonsky // Ukrainian journal of physics. - 2013. - Vol. 58, № 1. - С. 20-25. - Режим доступу: http://nbuv.gov.ua/UJRN/Ukjourph_2013_58_1_5 Попередній перегляд: Завантажити - 193.407 Kb Зміст випуску Цитування
8.	Indutnyi I. Z. Nanostructured Au chips with enhanced sensitivity for sensors based on surface plasmon resonance [Електронний ресурс] / I. Z. Indutnyi, Yu. V. Ushenin, V. I. Myn'ko, P. E. Shepeliavyi, M. V. Lukaniuk, A. A. Korchovyi, R. V. Khrystosenko // Ukrainian journal of physics. - 2017. - Vol. 62, № 5. - С. 365-371. - Режим доступу: http://nbuv.gov.ua/UJRN/Ukjourph_2017_62_5_3 Попередній перегляд: Завантажити - 742.524 Kb Зміст випуску Цитування
9.	Michailovska K. V. Polarization memory of the luminescence related with Si nanoparticles embedded into oxide matrix [Електронний ресурс] / K. V. Michailovska, I. Z. Indutnyi, O. O. Kudryavtsev, M. V. Sopinskyy, P. E. Shepeliavyi // Semiconductor physics quantum electronics & optoelectronics. - 2015. - Vol. 18, № 3. - С. 324-329. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_3_17 Попередній перегляд: Завантажити - 365.665 Kb Зміст випуску Цитування
10.	Dan'ko V. A. Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist [Електронний ресурс] / V. A. Dan'ko, G. V. Dorozinsky, I. Z. Indutnyi, V. I. Myn'ko, Yu. V. Ushenin, P. E. Shepeliavyi, M. V. Lukaniuk, A. A. Korchovyi, R. V. Khrystosenko // Semiconductor physics, quantum electronics & optoelectronics. - 2015. - Vol. 18, № 4. - С. 438-442. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_4_13 This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the form of periodic surface nanostructures for surface plasmon resonance (SPR) refractometers. The IL technique was optimized for patterning the Au layers and formation of one-dimensional (grating) structures with the spatial frequency close to 3300 mm<^>-1. The spatial frequency and depth of grating grooves were selected with account of the condition for Bragg reflection of plasmons at the operation wavelength of SPR refractometer and given environment (which is a condition for enhancing biosensor sensitivity as compared to that of a flat Au chip surface). It has experimentally been demonstrated that the use of diffraction patterns in SPR sensor increases its response by 17 %. Попередній перегляд: Завантажити - 566.375 Kb Зміст випуску Реферативна БД Цитування
11.	Indutnyi I. Z. Enhancing sensitivity of SPR sensors using nanostructured Au chips coated with functional plasma polymer nanofilms [Електронний ресурс] / I. Z. Indutnyi, Yu. V. Ushenin, D. Hegemann, M. Vandenbossche, V. I. Myn'ko, P. E. Shepeliavyi, M. V. Lukaniuk, P. M. Lytvyn, R. V. Khrystosenko // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 3. - С. 362-368. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_3_16 The sensitivity of surface plasmon resonance (SPR) sensors operating in the Kretschmann configuration was investigated using Au SPR chips with a nano-grating surface functionalized via deposition of a-C:H:0 plasma polymer films. The surface of the chips was nanopattemed in order to improve the sensitivity of the sensor, as compared with the sensitivity of standard Au chips with a flat (unstructured) surface. It was found that deposition of the plasma polymer nanofilms neither affected the degree of refractometer sensitivity enhancement, nor the width of the operation range of the environment refractive index (n), in which the enhancement was observed. Such functionalization of the chip surface merely resulted in the shift of the operation range position to smaller values of n in comparison to non-coated chips requiring deposition of stable functional films. Попередній перегляд: Завантажити - 1.265 Mb Зміст випуску Реферативна БД Цитування
12.	Lytvyn P. M. Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist [Електронний ресурс] / P. M. Lytvyn, S. V. Malyuta, I. Z. Indutnyi, A. A. Efremov, O. V. Slobodyan, V. I. Min’ko, A. N. Nazarov, O. V. Borysov, I. V. Prokopenko // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 2. - С. 152-159. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_2_9 Combined mechanical scanning probe lithography (SPL) approach applied for the direct mask-less modification of graphene oxide (GO) flakes and the mask patterns engraving in layers of chalcogenide resist with a nanometer scale resolution have been implemented in this work. It was compared the dynamics of mechanical modification of chalcogenide films and multilayer GO flakes deposited from an aqueous suspension. The double-layer As40Se60/As4Ge30S66 chalcogenide resist developed for mechanical SPL and pattern formation processes have optimized. The resist with the thickness close to 100 nm provides formation of minimal pattern elements with the size of several tens nanometers. The SPL approach was realized on the basis of serial NanoScope IIIa Dimension 3000 scanning probe microscope, and original software utilities were developed. These mechanical SPL could be intended for the verification of innovative ideas in academic researches, the laboratory-level device prototyping, developing the functional prototypes of new devices in bio/nanosensorics, plasmonics, 2D electronics and other modern technology branches. Попередній перегляд: Завантажити - 1.816 Mb Зміст випуску Реферативна БД Цитування
13.	Hreshchuk O. M. Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography [Електронний ресурс] / O. M. Hreshchuk, V. O. Yukhymchuk, V. M. Dzhagan, V. A. Danko, V. I. Min'ko, I. Z. Indutnyi, P. Ye. Shepeliavyi, P. M. Lytvyn, E. Sheregii, S. Prokhorenko // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 2. - С. 215-223. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_2_14 Laterally ordered gold nanoisland arrays made using interference lithography has been investigated in this work as SERS substrates. The developed substrates demonstrate performance in enhancing Raman signal of common dye analyte (crystal violet (CV)) comparable to commercial SERS substrates, with the lowest detectable concentration of CV ~<$E10 sup -6 ~-~10 sup -7> M. They can be reused after heat treatment at <$E300~symbol Р roman C> without any drop of performance. Furthermore, we found a principal difference in the effect of annealing of SERS substrates before deposition of the analyte molecules and additional in situ annealing (with molecules) on the intensity of Raman signal. Possible physical origin of the latter effect has been discussed. Попередній перегляд: Завантажити - 3.757 Mb Зміст випуску Реферативна БД Цитування
14.	Dan'ko V. A. Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation [Електронний ресурс] / V. A. Dan'ko, I. Z. Indutnyi, V. I. Myn'ko, S. V. Mamykin, P. Ye. Shepeliavyi, M. V. Lukaniuk, P. M. Lytvyn // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 3. - С. 353-360. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_3_17 We present results of experiments to determine the dispersion of the plasmon modes associated with Au nanowire gratings with a fixed spatial frequency (3370 mm<^>-1) and different slits between the nanowires fabricated using an interference (interferometric) lithography technique. Optical properties of fabricated plasmonic structures were studied using measurements of spectral and angular dependence of P- and S-polarized extinction in the wavelength range <$E 0,4~-~1,1~mu roman m>, angles of incidence 10 - 70 degrees in conical mounting (at variable azimuth angle within the range <$E phi~=~0~-~90> degrees). It has been shown that in the grating with the average slit between the nanowires equal to half of the grating period at <$E phi~=~0> only local plasmons (LP) are excited by P-polarized light. When the azimuth angle changes from 0 to 90<$E symbol Р>, the intensity of the excited LP is smoothly "transferred" from P- to S-polarized excitation, and at <$E phi> ~ 30 - 45 degrees the intensities of the LP bands in both polarizations are approximately equal. However, in the sample with narrow slits between the nanowires (40 nm) we observe the mixed mode with excitation both surface plasmon-polariton (SPP) and LP in the P-polarization at <$E phi~=~0>. With cp rising, the intensity of the mixed mode in P-polarization decreases and simultaneously the LP mode intensity in S-polarization increases. Попередній перегляд: Завантажити - 1.923 Mb Зміст випуску Реферативна БД Цитування
15.	Indutnyi I. Z. Shape effect of laterally ordered nanostructures on the efficiency of surface-enhanced Raman scattering [Електронний ресурс] / I. Z. Indutnyi, V. O. Yukhymchuk, V. I. Mynko, S. V. Mamykin, N. V. Mazur, O. F. Isaieva, V. M. Dzhagan, V. A. Danko, V. S. Yefanov, A. A. Korchovyy, P. M. Lytvyn // Ukrainian journal of physics. - 2024. - Vol. 69, № 1. - С. 11-19. Зміст випуску Повний текст публікації буде доступним після 01.08.2024 р., через 3 днів

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