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Загальна кількість знайдених документів : 5
Представлено документи з 1 до 5
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Liubchenko O. I. Modeling of X-ray rocking curves for layers after two-stage ion-implantation [Електронний ресурс] / O. I. Liubchenko, V. P. Kladko, O. Yo. Gudymenko // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 3. - С. 355-361. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_3_15 In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111) crystals implanted with Be<^>+ ions with various energies and doses. The method is based on the semi-kinematical theory of X-ray diffraction in the case of Bragg geometry. A fitting procedure that relies on the Hooke - Jeeves direct search algorithm was developed to determine the depth profiles of strain and structural disorders in the ion-modified layers. The thickness and maximum value of strain of ion-modified InSb(lll) layers were determined. For implantation energies 66 and 80 keV, doses 25 and 50 <$Emu>C, the thickness of the strained layer is about 500 nm with the maximum value of strain close to 0,1 %. Additionally, an amorphous layer with significant thickness was found in the implantation region.
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Liubchenko O. I. The effect of ion implantation on structural damage in compositionally graded AlGaN layers [Електронний ресурс] / O. I. Liubchenko, V. P. Kladko, H. V. Stanchu, T. M. Sabov, V. P. Melnik, S. B. Kryvyi, A. E. Belyaev // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 1. - С. 119-129. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_1_20 Compositionally graded AlxGa1-xN alloys with the Al concentration in the (<$E7~symbol Г~x~symbol Г~32>) range were implanted with Ar<^>+ ions to study the structural and strain changes (strain engineering). It was shown that ion implantation leads to ~0,3 - 0,46 % hydrostatic strains and a relatively low damage of the crystal structure. The ion-implantation leads mainly to an increase of the density of point defects, while the dislocation configuration is almost unaffected. The density of microdefects is sufficiently reduced after the postimplantation annealing. The structural quality of the AlxGa1-xN layers strongly depends on the Al concentration and is worsen with increasing Al. The implantation induced structural changes in highly dislocated AlxGa1-xN layers are generally less pronounced. Based on the X-ray diffraction, a model is developed to explain the strain field behavior in the AlxGa1-xN heterostructures by migration of point defects and strain field redistribution. The approach to simulate <$E2 theta "/" omega> scans using statistical dynamical theory of X-ray diffraction for implanted compositionally graded structures AlGaN has been developed.
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Borcha M. D. Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data [Електронний ресурс] / M. D. Borcha, M. S. Solodkyi, S. V. Balovsyak, V. M. Tkach, I. I. Hutsuliak, A. R. Kuzmin, O. O. Tkach, V. P. Kladko, O. Yo. Gudymenko, O. I. Liubchenko // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 4. - С. 381-386. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_4_4 The structural homogeneity and degree of perfection inherent to mosaic Ge:Sb samples were investigated. The modified methods for analyzing diffraction images of backscattered electrons (Kikuchi patterns) were used to reduce the influence of instrumental factors. The root-mean-square deformations in the local regions of separate grains and at the boundaries between them were determined using the value of the spatial frequency of the energy spectrum of two-dimensional Fourier transform of Kikuchi patterns. It is shown that the maximum values of deformations (~<$E3,5~cdot~10 sup -3>) are typical for local regions, which are usually located at the boundaries between subgrains. X-ray studies confirm obtained values of root-mean-square deformations.The structural homogeneity and degree of perfection inherent to mosaic Ge:Sb samples were investigated. The modified methods for analyzing diffraction images of backscattered electrons (Kikuchi patterns) were used to reduce the influence of instrumental factors. The root-mean-square deformations in the local regions of separate grains and at the boundaries between them were determined using the value of the spatial frequency of the energy spectrum of two-dimensional Fourier transform of Kikuchi patterns. It is shown that the maximum values of deformations (~<$E3,5~cdot~10 sup -3>) are typical for local regions, which are usually located at the boundaries between subgrains. X-ray studies confirm obtained values of root-mean-square deformations.
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Kaliuzhnyi V. V. Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations [Електронний ресурс] / V. V. Kaliuzhnyi, O. I. Liubchenko, M. D. Tymochko, Y. M. Olikh, V. P. Kladko, A. E. Belyaev // Ukrainian journal of physics. - 2021. - Vol. 66, № 12. - С. 1058-1062. - Режим доступу: http://nbuv.gov.ua/UJRN/Ukjourph_2021_66_12_8
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Kaliuzhnyi V. V. Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations [Електронний ресурс] / V. V. Kaliuzhnyi, O. I. Liubchenko, M. D. Tymochko, Y. M. Olikh, V. P. Kladko, A. E. Belyaev // Український фізичний журнал. - 2021. - Т. 66, № 12. - С. 1056-1060. - Режим доступу: http://nbuv.gov.ua/UJRN/UPhJ_2021_66_12_8
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