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Список видань за алфавітом назв: Авторський покажчик Покажчик назв публікацій  |
Пошуковий запит: (<.>A=Vlaskina S$<.>) | |||
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Загальна кількість знайдених документів : 11 Представлено документи з 1 до 11 |
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| 1. | 
Lee S. W. Silicon carbide defects and luminescence centers in current heated 6H-SiC [Електронний ресурс] / S. W. Lee, S. I. Vlaskina, V. I. Vlaskin, I. V. Zaharchenko, V. A. Gubanov, G. N. Mishinova, G. S. Svechnikov, V. E. Rodionov, S. A. Podlasov // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 1. - С. 24-29. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_1_7 At room temperature yellow photoluminescence with a broad peak of 2,13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep acceptor and donor level. But the nature of the deep level has not been clearly understood yet. We annealed 6H-SiC substrates by current in vacuum without boron injection at the temperature of 1350 and 1500 <$E symbol Р>C. We received red and yellow luminescence in PL spectrum for the heated 6H-SiC. The luminescence was regarded as donor-acceptor pair recombination involving the deep aluminum acceptor related to the adjacent carbon vacancies and nitrogen donor or the formation of quantum well like regions of 3C-SiC in 6H-SiC matrix. | ||
| 2. |
Vlaskina S. I. 3C-6H transformation in heated cubic silicon carbide 3C-SiC [Електронний ресурс] / S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov // Semiconductor physics, quantum electronics & optoelectronics. - 2011. - Vol. 14, № 4. - С. 432-436 . - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2011_14_4_12 Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a polytypes joint after high temperature annealing were investigated. Fine structure at the energy of E | ||
| 3. |
Vlaskina S. I. Silicon carbide phase transition in as-grown 3C-6H polytypes junction [Електронний ресурс] / S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, G. S. Svechnikov, V. E. Rodionov, S. W. Lee // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 2. - С. 132-135. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_2_8 Perfect pure (concentration of donors ~10<^>16 | ||
| 4. |
Vlaskina S. I. 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions [Електронний ресурс] / S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 3. - С. 273-279. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_3_9 | ||
| 5. |
Vlaskina S. I. Nanostructures in lightly doped silicon carbide crystals with polytypic defects [Електронний ресурс] / S. I. Vlaskina, G. N. Mishinova, L. V. Vlaskin, V. E. Rodionov, G. S. Svechnikov // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 2. - С. 155-159. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_2_7 In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown original defects ar reported. Undoped SiC single crystals with the impurity concentration of <$EN sub D~-~N sub A> ~ <$E(2~-~8)~cdot~10 sup 16~roman cm sup -3>, <$E N sub A> ~ <$E (2~-~8)~cdot~10 sup 17~roman cm sup -3>, and <$E N sub D~-~N sub A> ~ <$E (1~-~5)~cdot~10 sup 17~roman cm sup -3>, <$E N sub D~symbol Г~1~cdot~10 sup 18~roman cm sup -3> were investigated. The analysis of absorption, excitation and low temperature photoluminescence spectra suggests formation of a new micro-phase during the growth process and appearance of the deep-level (DL) spectra. The complex spectra of the crystals can be decomposed into the so-called DL | ||
| 6. |
Vlaskina S. I. Peculiarities of phase transformations of SiC crystals and thin films with in-grown original defects [Електронний ресурс] / S. I. Vlaskina, G. N. Mishinova, V. E. Rodionov, G. S. Svechnikov // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 4. - С. 380-383. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_4_14 Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth. The complex spectra can be decomposed into similar structure-constituting spectra shifted against each other on the energy scale. These spectra are indicative of formation of new nanophases. Taking into account the position of the short-wave edge in the zero-phonon part of the SF-i spectra as well as the position of corresponding excitation spectra and placing them on the well-known linear dependence of the exciton gap (E | ||
| 7. |
Vlaskina S. I. Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films [Електронний ресурс] / S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov // Semiconductor physics, quantum electronics & optoelectronics. - 2015. - Vol. 18, № 2. - С. 209-214. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_2_20 In this work, the results of investigations of DL | ||
| 8. |
Vlaskina S. I. External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals [Електронний ресурс] / S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov // Semiconductor physics, quantum electronics & optoelectronics. - 2015. - Vol. 18, № 4. - С. 448-451. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_4_15 Influence of plastic deformation and high-temperature annealing (<$ET~=~2100~symbol Р roman C>, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are inherent to SiC crystals with distortions of the structure related with availability of packing defects that lead to onedimensional disordering (along the c-axis). They are a most expressed in doped crystals with original growth defects. DL luminescence appears in pure crystals at plastic deformation and in doped crystals at a hydrostatic pressure. It enhances at the high temperature annealing, too. | ||
| 9. |
Vlaskina S. I. Nanocrystalline silicon carbide films for solar cells [Електронний ресурс] / S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 3. - С. 273-278. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_3_7 Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated, p- and n-types 100-mm silicon wafers with (100) orientation were used as substrates for SiC films deposition. The films were deposited using High-Frequency Plasma Enhanced Chemical Vapor Deposition (HF-PECVD) with CH3SiCl3 gas as a silicon and carbon source. Hydrogen supplied CH3SiCl3 molecules in the field of HF discharge. Deposition was carried out on a cold substrate. The power density was 12,7 W/cm2. Deposition conditions were explored to prepare films with a controlled band gap and a low defect density. Formation of nc-3C-SiC films has been confirmed by the high resolution-transmission electron microscopy analysis, optical band gap values ETauc, conductivity, charge carrier activation energy and Hall measurements. The efficiency of photoconductivity was calculated for evaluating the photoconductivity properties and for the correlations with technology. For p-n junction creation in solar cell fabrication, the n-types nc-SiC films were doped with Al. Employing Al as a doping material of nc-n-SiC, the open-circuit voltage as high as 1,43 V has been achieved. | ||
| 10. |
Vlaskina S. I. Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations [Електронний ресурс] / S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 1. - С. 62-66. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_1_14 Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements. | ||
| 11. |
Vlaskina S. I. Nanograin boundaries and silicon carbide photoluminescence [Електронний ресурс] / S. I. Vlaskina, G. N. Mishinova, V. I. Vlaskin, V. E. Rodionov, G. S. Svechnikov // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 3. - С. 344-348. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_3_13 The luminescence spectra of SiC crystals and films with grain boundaries (GB) on the atomic level were observed. The GB spectra are associated with luminescence centers localized in areas of specific structural abnormalities in the crystal, without no reference to the one-dimensional layer-disordering. The zero-phonon part of GB spectra is always within the same energy range (2,890 - 2,945 eV) and does not fit in the dependence of its position in the energy scale on the percent of hexagonality as in the case of stacking faults (SF | ||
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