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Загальна кількість знайдених документів : 4
Представлено документи з 1 до 4
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Avramenko K. A. Raman and Photoluminescence Study of ZnO Films Grown by Chemical Method [Електронний ресурс] / K. A. Avramenko, А. S. Romanyuk, N. N. Roshina, V. V. Strelchuk, O. F. Kolomys, L. V. Zavyalova, S. V. Svechnikov, B. A. Snopok // Proceedings of the International Conference Nanomaterials: Applications and Properties. - 2012. - Vol. 1, no. 3. - С. 03TF12-03TF12. - Режим доступу: http://nbuv.gov.ua/UJRN/princon_2012_1_3_14
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Marchylo O. M. Investigation of luminescent properties inherent to SrTiO3:Pr3+ luminophor with Al impurity [Електронний ресурс] / O. M. Marchylo, L. V. Zavyalova, Y. Nakanishi, H. Kominami, A. E. Belyaev, G. S. Svechnikov // Semiconductor physics, quantum electronics & optoelectronics. - 2011. - Vol. 14, № 4. - С. 461-464. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2011_14_4_18 The red-emitting SrTiO3:Pr<^>3+,Al luminophors that can be used for the white light emitting diodes (LEDs) were prepared using the sol-gel method. The starting materials were SrCl2, Ti (O - i - C3H7)4, <$E roman {Al(NO sub 3 ) sub 3~cdot~9H sub 2 O}> and PrCl3. The reaction between them results in a mixture of compounds that transform into single-phase SrTiO3:Pr<^>3+,Al after annealing in air. Displacement of Ti out of the SrTiO3 lattice caused by substitution with Al and formation of individual crystalline TiO2 phase (rutile) were observed. PL spectra show the high-intense red peak (<$E lambda~=~617> nm), the same high-intense peak with the full width at half maximum (FWHM) 20 nm was found in cathodoluminescence spectra. The increase of the aluminium concentration from 0 up to 15 mol.% leads to approximately two-fold increase in the luminance. The latter increases from 180 up to 350 cd/m<^>2 at the anode voltage 10 kV and current density 30 <$E mu roman {A "/" cm sup 2}>.
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Pusenkova A. S. SrTiO3:Eu3+ phosphors prepared by sol-gel synthesis: Structural characterization, magnetic properties and luminescence spectroscopy study [Електронний ресурс] / A. S. Pusenkova, O. N. Marchylo, L. V. Zavyalova, I. S. Golovina, S. V. Svechnikov, B. A. Snopok // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 4. - С. 343-351. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_4_6
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Tatyanenko N. P. Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface [Електронний ресурс] / N. P. Tatyanenko, N. N. Roshchina, V. L. Gromashevskii, G. S. Svechnikov, L. V. Zavyalova, B. A. Snopok // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 3. - С. 263-272. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_3_9 The effect of illumination in the visible spectral range on the magnitude of transverse acoustoelectric effect (TAE) in ZnS/Si structures was studied using a noncontact surface acoustic wave device based on the acoustoelectronic structure with an air gap. ZnS films were obtained using pyrolysis of the chelate organometallic complex, zinc diethyldithiocarbamate, on Si substrates within the temperature range 220 to <$E260~symbol Р roman C>. It has been established that the charge of the adsorption origin on the external surface of the ZnS film strongly influences the photo-processes in the structure under consideration. For the samples with a small surface charge, the value of TAE decreases rapidly with the increase in illumination power due to an increase in the concentration of non-equilibrium carriers. For the samples with a large surface charge, the barrier-trap mechanism of photogeneration is observed, in which the appearance of non-equilibrium carriers is accompanied by their capture and subsequent thermalization. This compensating mechanism explains well both stabilization of the magnitude of TAE by a distributed system of traps with rather large capacitance, and the specific shape of dependence of the TAE magnitude on illumination power. The technique developed by us on the basis of the transverse acoustoelectric effect in the layered piezodielectric/air-gap/semiconductor structure is a powerful tool for non-contact determination of the charge state of film structures, depending on their deposition parameters and various external conditions.
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