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Charikova T. Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese [Електронний ресурс] / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. - 2015. - Т. 41, № 2. - С. 207-209. - Режим доступу: http://nbuv.gov.ua/UJRN/PhNT_2015_41_2_15 The magnetic moment and magnetization in GaAs/Ga0,84In0,16As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn delta-layer thicknesses near GaInAs-quantum well (~ 3 nm) in temperature range T = 1,8 - 300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga0,84In0,16As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.
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