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Пошуковий запит: (<.>AT=Kiselov Simple method for SiC$<.>) |
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Kiselov V. S. Simple method for SiC nanowires fabrication [Електронний ресурс] / V. S. Kiselov, O. S. Lytvyn, V. O. Yukhymchuk, A. E. Belyaev // Semiconductor physics, quantum electronics & optoelectronics. - 2011. - Vol. 14, № 1. - С. 7-11 . - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2011_14_1_4 In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60 - 80 min at 1450 - 1500 <$E symbol Р>C by using a simple and low-cost method in an industrial furnace with a resistant heater.
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