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Momot N. Zero bias terahertz and subterahertz detector operating at room temperature [Електронний ресурс] / N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats'ka, M. Smoliy, N. Dmytruk // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 2. - С. 166-169. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_2_13 In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound <$E {roman Hg} sub 1-x {roman Cd} sub x roman Te> is presented. The measurements were performed in the temperature range ftom 77 to 300 K at various operating mode and frequency. The estimated value of the noise equivalent power at room temperature for detector proposed was <$E 1,3~cdot~10 sup -8> and <$E 5,4~cdot~10 sup -9> W/Hz<^>1/2 at bias current I = 1 mA and I = 0, respectively.
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