Індекс рубрикатора НБУВ: К233.102 + К233.202

Рубрики:

Кристалічна будова алюмінію та його сплавів

Шифр НБУВ: Ж41115 Пошук видання у каталогах НБУВ 

The processes at high temperature annealing of non-stoichiometric <$E {roman MgO}~cdot~n roman {Al sub 2 O sub 3}> spinel crystals (n = 2,2) in O2 atmosphere at 1300 - 1500 <$E symbol Р>C have been investigated. A gradual non-stoichiometry increase up to n = 2,8 has been found with increasing annealing time due to MgO evaporation followed by formation of polycrystalline <$E alpha - roman {Al sub 2 O sub 3}> phase. The structure and composition <$E {roman MgO}~cdot~n roman {Al sub 2 O sub 3}> layer grown at the sapphire surface in MgO vapor of at 1500 - 1800 <$E symbol Р>C have been studied. The formation of amorphous phase in transition zone from hexagonal sapphire structure with a piling sequence ABABAB into spinel cubic one with sequence of atomic layers ABCABC was established.