A p-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTe-based UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasiclosed space condensation. A transparent current collecting electrode for the surface-barrier structure of p-ZnTe/n-CdSe heterojunction was made of degenerate p-Cu_1,8S. Surface relief of ZnTe grown on different substrates was studied with scanning atomic force microscopy. The energy band offset diagrams of heterojunction are built and photosensitivity spectra are presented.