Interest in diamond-like carbon (DLC) thin films has increased considerably in the last few years. It was suggested that DLC films may be used for electronic devices, especially operating at high temperatures. The subject of this contribution is the electrical conduction of a metal - DLC - silicon - metal system. The charge carrier transport in the investigated systems can be understood as a combination of a rectifying barrier, which is located at the DLC - Si interface, and the DLC bulk. The transport in the DLC film is mainly due to the hopping process near the Fermi level.

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