Currents through ultrathin dielectric films SiO₂ are used for storage and erase charge in electrically programmable memory elements and are very important for reliability of ultra-large integral circuits (IC). The influence of different parameters such as the doping level and type of a substrate, oxide thickness, and post-metallization annealings is investigated in detail. MOS structures with aluminum gate were used for study. The doping level in substrates influences the Fowler-Nordheim current significantly, and this influence is decreased with a growth of the oxide thickness. The annealings in hydrogen and in H₂O reduce the Fowler-Nordheim current. The influence of H₂O is stronger. To explain the observed experimental results, the influence of the charge in SiO₂ on experimental current-voltage I (V) characteristics and the corresponding Fowle-Nordheim curves of MOS structures is considered. The charge at the Si - SiO₂ interface and in SiO₂ was determined by step-by-step etching of silicon dioxide and measurements of capacitance-voltage C (V) characteristics. The influence of the charge built-up in SiO₂ on the I (V) characteristics of a MOS structure is based on the oxide charge induced tunnel transparency modification. The Fowler-Nordheim currents in MOS structures were theoretically calculated in the Wenzel-Kramers-Brillouin energy barrier transparency approximation.

• Литовченко Володимир Григорович (1931–2021) (фізико-математичні науки)

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