This work reports the evolution of the chemical species on the porous silicon (PS) surface and the room temperature visible photoluminescence (PL) from PS layers naturally oxidized for a period of two years, approximately. The Si - O and Si - Hx - O bonds increase due to the aging process, but the hydrogen surface coverage is preserved. The PL peaks shift to higher energies as the surface areas are naturally oxidized. The PL intensity is meaningfully increased in samples with more reactive surface area, induced by oxidation in O2 atmosphere, or when gases are desorbed from the inner surface area of aging samples. Samples immersed in HF solution show both PL shift to 685 nm and a decrease in intensity. The experiments are explained mixing quantum confinement model and surface effects.

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