The principles to create the semiconductor sensors to determine the atom concentration (H, O) in gases (H2, O2, O2 + Ar etc.) are described. The principles to create the sensors on the basis of semiconductor surface excited by heterogeneous chemiluminescence (HCL) owing to energy of heterogeneous atoms recombination. Conditions of work and semiconductor for non-equilibrium chemiluminescent sensors on solid are determined. It's showed, that HCL excitation of semiconductor sensor takes place as a result of impact atoms recombination by Rideal-Eley's mechanism only. It's retrieved, that to this wide band gap semiconductors <$E roman {A sup II B sup VI}> (ZnS, CdS) satisfy. The processes taking place during HCL excitation were modeled numerically using the developed excitation mechanism of heterogeneous chemiluminescence.

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