The electrical conductivity of ZnSe:In crystals doped by indium during growth and crystals subjected to diffusion doping by indium from a melt are investigated. It is shown that electrical conductivity of ZnSe:In crystals doped by indium during growth is controlled by donors <$E roman In sub Zn sup +>, <$E {roman In} sub i sup 3+> and compensating acceptors - zinc vacancies, centers (VZnInZn). In crystals subjected to diffusion by indium from melt, electrical conductivity is controlled by shallow donors <$E roman In sub Zn sup +>. The annealing of ZnSe:In crystal in zinc melt gives the decrease in concentration of compensating acceptors and increase of crystal conductivity.

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