We designed a new hot-filament plant which features some new operating states for chemical vapor infiltration with diamond. Complete infiltration of porous substrates with diamond by using standard hot filament plants is not possible. Chemical vapor infiltration with diamond is limited by the overgrowing diamond layer at the surface primarily caused by high recombination rates of atomic hydrogen on surfaces. As a consequence, the pore mouth is closed before the pore is completely infiltrated ("bottleneck" effect). Porous substrates were infiltrated by using a forced flow through the substrate. In order to achieve good infiltration results, it was necessary to use very low methane concentrations.

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