The influence of ammonia, water and ethylene vapors on I - V characteristics of forward and reverse currents, as well as on the kinetics of the surface current in silicon p - n structures was studied. All these vapors enhance both the forward and reverse currents. The gas sensitivity of p - nstructures at forward biases is due to enhanced surface recombination, while at reverse biases a surface conductive channel shorts the p - n junction. The sensitivity to ammonia is much higher than to other vapors. It is explained as a result of donor properties of NH3 molecules. The response time of silicon p - n junctions as gas sensors at room temperature is below 60 s.

Індекс рубрикатора НБУВ: В379.271.21

Рубрики:

р-n переходи

Шифр НБУВ: Ж67522 Пошук видання у каталогах НБУВ 

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