Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with <$E roman O sup +> ions. A distribution of implanting layer is characterized by different profile. The effective susceptibility (response on the external field) and dissipative function of inhomogeneous along thickness semiconductor film were calculated. The absorption spectra are numerically calculated as a function of frequency and incident angle. It was obtain that light absorption spectra are strongly dependent on profile distributions of implanted impurities along film thickness.

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