It has been presented the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap <$E {roman Cd} sub x {roman Hg} sub 1-x roman Te> epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of impurity sources have been used for solid state doping: homogeneously doped with As(Sb) single crystal substrates of CdTe, As doped buffer <$E {roman Cd} sub y {roman Hg} sub 1-y roman Te> (<$E y~>>~x>) epitaxial layers obtained by RF sputtering in mercury glow discharge onto undoped CdTe substrates, and As(Sb) implanted undoped CdTe substrates. The results of comparative analysis of galvano-magnetic measurements and SIMS spectra indicated very high, practically nearly ~ 100 %, electrical activity of dopants in the <$E {roman Cd} sub x {roman Hg} sub 1-x roman Te> epitaxially grown layers.

• Бончик Олександр Юрійович (фізико-математичні науки)

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