The mechanisms of formation of modified thin-film structures based on Ge-Se(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure is greatly influenced by the vapor composition, energetic state of its particles, the velocity of condensation, the temperature of the lining and that of evaporator. The <$E roman {symbol ... Ge sub 0,4 S sub 0,6 : X symbol ъ}> (Bi, Pb, In), <$E roman {symbol ... Ge sub 0,4 Se sub 0,6 : In symbol ъ}> structure is characterized by the mechanism of condensation which is realized according to the type: vapor-liquid-solid phase with coalescence. The condensation mechanism in <$E roman {symbol ... Ge sub 0,4 S sub 0,6 : Al(Te) symbol ъ}> structures is realized according to the type vapor-solid phase. The roughness of modified Al (2 at. %), Bi (14 at. %), Pb (12 at. %), In (1 at. %, 5 at. %) structures is 1...13 nm, and for <$E roman {symbol ... Ge sub 0,4 S sub 0,6 : Te symbol ъ}> (Te is 30,7 at. %) structure reaches ~ 37 nm. The thickness and optical parameters of modified thin-film structures have been determined using the method of multiangular ellipsometry.

• Кондратенко Ольга Сергіївна (фізико-математичні науки)

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