In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO2 layers co-implanted with <$E roman Si sup +> and <$E roman C sup +> ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5 - 10 at. % were achieved. Effect of hydrogen plasma treatment on electroluminescent and durability of SiO2 (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross sections of both electron traps and hole traps were determined. EL quenching at a great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO2 structures.

• Тягульський Станіслав Ігорович (фізико-математичні науки)
• Лисенко Володимир Сергійович (1940–) (фізико-математичні науки)
• Тягульський Ігор Петрович (фізико-математичні науки)

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