In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO2 layers co-implanted with <$E roman Si sup +> and <$E roman C sup +> ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5 - 10 at. % were achieved. Effect of hydrogen plasma treatment on electroluminescence and durability of SiO2 (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross-sections of both electron traps and hole traps were determined. EL quenching at great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO2 structures.

• Тягульський Станіслав Ігорович (фізико-математичні науки)
• Лисенко Володимир Сергійович (1940–) (фізико-математичні науки)
• Тягульський Ігор Петрович (фізико-математичні науки)

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