We studied degradation of high electron mobility transistors (HEMTs) subjected to 1,8 MeV proton irradiation at a fluence up to <$E 3~times~10 sup 15~roman cm sup -2>. The AlGaN/AlN/GaN-based structures have higher electron mobility than the AlGaN/GaN-based ones and higher radiation resistance, with no deterioration of electrical properties up to a fluence of <$E 10 sup 14~roman cm sup -2>. The measured electrical parameters of transistor structures demonstrated decrease of maximal transconductance and saturated current as well as increase of the threshold current. The principal mechanisms of structure degradation under the effect of proton irradiation are as follows: (i) reduction of mobility of charge carriers owing to increase in their scattering at the interface, and (ii) decrease in the concentration of charge carriers in the channel because of their transition from the conduction band to deep levels.

• Батаєв Микола Миколайович (хімічні науки)
• Батаєв Юрій Миколайович (фізико-математичні науки)

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