Using the depth-resolved cathodoluminecence spectroscopy and secondary-ion mass spectroscopy, we studied the effect of 1,8-MeV proton irradiation of AlxGa1-xN/GaN HEMT heterostructures on the spectral characteristics and transistor electrical parameters such as source - drain current, transconductance, saturation current and threshold voltage. The density and mobility of charge carriers in the channel as well as sheet resistance and contact resistivity were measured as a function of proton fluence. The results of studies showed that changes in spectral characteristics are due to (i) decreased internal electric field strength and (ii) increased concentration of irradiation-produced acceptors in the structure layers. The changes of heterostructure spectral properties under proton irradiation correlate with variation of the transistor electrical parameters.

• Батаєв Юрій Миколайович (фізико-математичні науки)

  Якщо, ви не знайшли інформацію про автора(ів) публікації, маєте бажання виправити або відобразити більш докладну інформацію про науковців України запрошуємо заповнити "Анкету науковця"