Glassy alloys of Ge40Te60-xSbx (where x = 2, 4, 6 and 10) were prepared by conventional rapid melt-quenching technique. The nature of the alloys was ascertained through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials could be prepared over the glass substrate by thermal evaporation technique. Vacuum evaporated indium electrodes were used here to perform electrical measurements. Coplanar structure of thin films was used in this case. The dc electrical conductivity measurements have been carried out. The dark conductivity, pre-exponential factor and activation energy have been calculated for various compositions. It has been found that the dark conductivity and pre-exponential factor increase, while the activation energy decreases with Sb concentration in Ge40Te60-xSbx system. The results can be reserved as an evidence for the chalcogenide nature defects in the above material.

Індекс рубрикатора НБУВ: В379.224 + В379.226 + Л434.63-1

Рубрики:

Склоподібні напівпровідники

Тонкі шари напівпровідників

Електровакуумне скло

Шифр НБУВ: Ж16425 Пошук видання у каталогах НБУВ 
Повний текст  Наукова періодика України 

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