The effect of a treatment in concentrated wet ammonia vapors on I - V characteristics of GaAs p - n junctions, measured in air and in ammonia vapors, was studied. Such a treatment strongly enhances the sensitivity of the surface current to the water- and ammonia vapors. In ammonia vapors of high enough partial pressure, a maximum in the forward branch of I - V characteristic appeared. The treated p - n junctions have higher gas sensitivity at reverse bias than at forward bias. This suggests that ammonia molecules adsorption, under sufficiently high NH3 partial pressure, forms in the p - n junction a surface conducting channel with degenerated electrons. And the observed maximum in the I - V characteristic is explained by tunnel injection of electrons from the conducting channel to the degenerated p<^>+ region.

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