The influence of isovalent impurity of Si on the kinetics of electron processes in <$E n- roman {Ge~symbol ... Sb symbol ъ}> single crystals has been investigated. It has been shown that in the region of predominant impurity scattering (at <$E T~symbol Ы~77,4> K), the presence of isovalent impurity significantly reduces the mobility of charge carriers and changes the sign of inequality <$E n sub e sub roman 300K~"/"~n sub e sub roman 77,4K~>>~1> characteristic of <$E n- roman {Ge~symbol ... Sb symbol ъ}> single crystals to the opposite one. It has found that in <$E n- roman {Ge~symbol ... Sb symbol ъ}> samples irradiated by <$E gamma>-rays (<^>60Co) with the dose <$E 1,23~cdot~10 sup 8> R, the charge carrier mobility has low radiation stability and decreases with increasing the magnetic field, while remaining practically unchanged in the region of the intermediate H values.

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