The crystallography and topography of the (100) cleavage surfaces of layered semiconductor In4Se3 crystal have been studied by low energy electron diffraction (LEED), scanning tunnelling and atomic-force microscopy (STM, AFM) in ultrahigh vacuum. The structure of surface LEED patterns, shape and dimensions of subsequent STM- and AFM-profiles agree well with the lattice parameters derived from the bulk crystal structure obtained by X-ray diffraction. The local density of states and band gap for (100) In4Se3 have been obtained by scanning tunnelling spectroscopy and point to the same integral gap value as for bulk crystal. The STM/STS results evidence the stability of interlayer cleavage surface and confirm that anisotropic striated low conductive cleavage surfaces might be suitable as matrices/templates in formation of surface nanowires or nanostructures.

• Мазур Петро Володимирович (технічні науки)

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