The results of experimental and theoretical researches of phosphorus distribution in the first cascade of a multi cascade solar cell based on nanoscale structures A^IIIB^V/Ge are presented. Secondary ion mass spectroscopy has been applied to obtain profiles of phosphorus and gallium in In_0,01Ga_0,99As/In_0,56Ga_0,44P/Ge heterostructure. In the germanium surface there is a thin layer of about 26 nm, in which the gallium concentration exceeds the concentration of phosphorus. Therefore a nanoscale p-n junction forms that does not have a significant impact on the solar cells performance at room temperature. Phosphorus diffusion is much slower in this area than in area with electronic conductivity. The main p-n junction is formed at a distance of 130 - 150 nm from the surface of the germanium. Diffusivity of gallium (D_Ga = 1,4 x 10^-15 cm²/s) is markedly higher than described in a literature. Diffusivity of P increase from D_P = 3 x 10^-15 cm²/s on the boundary of the heterostructure In_0,49Ga_0,51P to D_P = 5,2 x 10^-14 cm²/s in n-type Ge.

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