In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p - n-junction. The concentration of the n-region, equal to 10¹⁴ cm^-3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too.

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