Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p - n junction area S₀ can be considered as a sum of "SmallLEDs (SLEDs)" electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained. It was determined that the best structure for AlGaInN NH is p⁺GaN/p⁺Al_0,2Ga_0,8N/4(n-In_xGa_1-xN-nGaN)/ n⁺GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum radiation and two ones at the both ends of active region are іbarriersі which help to concentrate electrons/holes in active region and additionally іprotectі QW from different defects.

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