Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated, p- and n-types 100-mm silicon wafers with (100) orientation were used as substrates for SiC films deposition. The films were deposited using High-Frequency Plasma Enhanced Chemical Vapor Deposition (HF-PECVD) with CH₃SiCl₃ gas as a silicon and carbon source. Hydrogen supplied CH₃SiCl₃ molecules in the field of HF discharge. Deposition was carried out on a cold substrate. The power density was 12,7 W/cm². Deposition conditions were explored to prepare films with a controlled band gap and a low defect density. Formation of nc-3C-SiC films has been confirmed by the high resolution-transmission electron microscopy analysis, optical band gap values E_Tauc, conductivity, charge carrier activation energy and Hall measurements. The efficiency of photoconductivity was calculated for evaluating the photoconductivity properties and for the correlations with technology. For p-n junction creation in solar cell fabrication, the n-types nc-SiC films were doped with Al. Employing Al as a doping material of nc-n-SiC, the open-circuit voltage as high as 1,43 V has been achieved.

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