Titanium carbide was synthetized by sputtering graphite target on heated titanium substrate by magnetron sputtering process. The obtained samples were characterized by X-ray diffraction (XRD) analysis and Raman spectroscopy, the elemental analysis was made by Energy-dispersive X-ray spectroscopy (EDX). Titanium carbide (TiC) structure was obtained by deposition of sputtered carbon atoms and clusters to the resistively heated titanium substrate surface with temperatures 700, 800, 900 and <$E1000~symbol Р roman C>. The XRD analysis showed that the formation of TiC structure is take place when the substrate is heated to <$E1000~symbol Р roman C>. The Raman spectroscopy showed that when the incident power of laser is 100 % (35 mW) the structure is unstable in samples with the substrate temperatures 700, 800 and <$E900~symbol Р roman C> and the most stable titanium carbide structure is created when the substrate temperature is <$E1000~symbol Р roman C>.

  Якщо, ви не знайшли інформацію про автора(ів) публікації, маєте бажання виправити або відобразити більш докладну інформацію про науковців України запрошуємо заповнити "Анкету науковця"