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Пошуковий запит: (<.>TJ=SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS AND OPTOELECTRONICS - 2000 - Т. 3 - № 1<.>)
Загальна кількість знайдених документів : 18
Представлено документи з 1 до 18
1.

Anokhov S. Diffraction of optical beam by a half-plane // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
2.

Sizov F. F. Infrared detectors: оutlook and means // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
3.

Davidenko N. A. Luminescence and photoconductivity of poly-n-epoxypropylcarbazolee with intramolecular charge transfer compounds // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
4.

Shaykevich I. A. Optical properties, form of granules and electronic parameters of binary Al/Cr composites // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
5.

Borovytsky V. N. Residual error after non-uniformity correction // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
6.

Lepikh Ya. I. Tensoeffect in elements using surface acoustic waves in piezoceramic sound gides and sensors based on it // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
7.

Selishchev P. A. Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
8.

Beketov G. V. AFM study of micromorphology and microscopic growth mechanisms of Hg1-xCdxTe LPE epitaxial layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
9.

Snopok B. A Biochemical passivation of metal surfaces for sensor application: reactive annealing of polycrystalline gold films in hydrogen sulfide atmosphere // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
10.

Karachevtseva L. A. Development and optical characteristics of the macroporous silicon structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
11.

Virt І. S. Effect of thermal neutron irradiation effect on the electrophysical and photoelectrical properties of Hg0,8Cd0,2Te crystals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
12.

Sachenko A. V. Exciton-enhanced recombination in silicon at high concentrations of charge carriers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
13.

Fedorenko L. Laser-induced donor centers is p-InSb // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
14.

Neimash V. B. Microfluctuations of oxygen impurity concentration as a reason of an accelerated diffusion of oxygen in silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
15.

Gnatyuk V. A. Modification of photoelectrical and electrical properties of АIIIBV semiconductors by pulsed laser irradiation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
16.

Baschenko S. M. Science and technology excimer laser complex and examples of its applications // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
17.

Pokutnyi S. I. Theoretical investigation of the light absorption and scattering by nanoparticles // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
18.

Romanjuk B. Ultrasound effect on radiation damages in boron implanted silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
 
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