Пошуковий запит: (<.>TJ=SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS AND OPTOELECTRONICS - 2000 - Т. 3 - № 1<.>) |
Загальна кількість знайдених документів : 18
Представлено документи з 1 до 18
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Anokhov S. Diffraction of optical beam by a half-plane // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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Sizov F. F. Infrared detectors: оutlook and means // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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Davidenko N. A. Luminescence and photoconductivity of poly-n-epoxypropylcarbazolee with intramolecular charge transfer compounds // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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4. |
Shaykevich I. A. Optical properties, form of granules and electronic parameters of binary Al/Cr composites // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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Borovytsky V. N. Residual error after non-uniformity correction // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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Lepikh Ya. I. Tensoeffect in elements using surface acoustic waves in piezoceramic sound gides and sensors based on it // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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Selishchev P. A. Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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8. |
Beketov G. V. AFM study of micromorphology and microscopic growth mechanisms of Hg1-xCdxTe LPE epitaxial layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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Snopok B. A Biochemical passivation of metal surfaces for sensor application: reactive annealing of polycrystalline gold films in hydrogen sulfide atmosphere // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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Karachevtseva L. A. Development and optical characteristics of the macroporous silicon structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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11. |
Virt І. S. Effect of thermal neutron irradiation effect on the electrophysical and photoelectrical properties of Hg0,8Cd0,2Te crystals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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12. |
Sachenko A. V. Exciton-enhanced recombination in silicon at high concentrations of charge carriers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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13. |
Fedorenko L. Laser-induced donor centers is p-InSb // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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14. |
Neimash V. B. Microfluctuations of oxygen impurity concentration as a reason of an accelerated diffusion of oxygen in silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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15. |
Gnatyuk V. A. Modification of photoelectrical and electrical properties of АIIIBV semiconductors by pulsed laser irradiation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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16. |
Baschenko S. M. Science and technology excimer laser complex and examples of its applications // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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17. |
Pokutnyi S. I. Theoretical investigation of the light absorption and scattering by nanoparticles // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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18. |
Romanjuk B. Ultrasound effect on radiation damages in boron implanted silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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