Пошуковий запит: (<.>U=В379.26$<.>) |
Загальна кількість знайдених документів : 162
Представлено документи з 1 до 20
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Konoreva O. V. Acoustic-stimulated relaxation of GaAs1-xPx LEDs electroluminescence intensity // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2016. - 19, № 1.
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Polishko O. Acusto-optic modulator and deflector for nonpolarized light // Вісн. Київ. нац. ун-ту. Сер. Радіофізика та електроніка. - 2012. - Вип. 18.
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Koshevaya S. V. Amplification of hypersonic by GaAs crystals. — 2006 // Укр. фіз. журн.
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Abdelaziz Abboudi Characterization of the microstructural and mechanical properties of MoZrN coating // Журн. нано- та електрон. фізики. - 2017. - 9, № 1.
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Bochkova T. M. Charge transport in bismuth orthogermanate crystals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 2.
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Vasin A. V. Correlation of deposition parameters, film thickness and mechanical stresses in a-C:H films on silicon substrates // Functional Materials. - 2000. - 7, № 1.
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Kladko V. P. Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 4.
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Menshikova S. I. Effect of deviation from stoichiometry on transport and mechanical properties of Bi2Se3 polycrystals // Фізика низ. температур. - 2021. - 47, № 2.
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Goncharov A. A. Effect of energy factors on the structure and substructure characteristics of hafnium diboride films deposited by RF magnetron sputtering // Metallophysics and Advanced Technologies. - 2020. - 42, № 6.
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Brahim Chermime Effect of heat treatments on the mechanical properties of a form tool // Журн. нано- та електрон. фізики. - 2018. - 10, № 3.
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Zaulychnyy Ya. V. Effect of mechanical activation of highly disperse <$E bold roman {SiO sub 2 "/" alpha -F sub 2 O sub 3 }> mixtures on distribution of valence electrons // Металлофизика и новейшие технологии. - 2015. - 37, № 8.
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Pluzhnikov V. B. Effect of pressure on the Fermi surface and electronic structure of ErGa3. — 1999 // Физика низ. температур.
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Mex L. Elastic properties of 5d transition-metal carbides: an ab initio study // Condensed Matter Physics. - 2015. - 18, № 3.
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Ilchuk H. A. Elastic properties of CdTe1-xSex (x = 1/16) solid solution: first principles study // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2020. - 23, № 4.
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Kuryliuk V. V. Elastic strains in SiGe heterostructures with non-uniform quantum dots // Укр. фіз. журн.. - 2013. - 58, № 8.
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Dub S. N. Elasticity module and hardness of niobium and tantalum anode oxide films // Functional Materials. - 2007. - 14, № 3.
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Ermakov A. P. Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals // Functional Materials. - 2004. - 11, № 4.
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Smyntyna V. A. Factors influencing the yield stress of silicon. — 2010 // Фотоэлектроника.
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Skibinsky K. M. Features of acoustic resonance in iron borate // Functional Materials. - 2014. - 21, № 1.
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Boyko Yu. I. Formation mechanisms and geometry of the crack assemble formed under uniaxial cyclic compression of NaCl single crystals // Functional Materials. - 2012. - 19, № 4.
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