Пошуковий запит: (<.>U=В379.225$<.>) |
Загальна кількість знайдених документів : 171
Представлено документи з 1 до 20
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Курило І. В. CdTe як пасивувальний шар у гетероструктурі СdTe/HgCdTe. — 2006 // Вісн. Нац. ун-ту "Львів. політехніка".
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Auleytner J. Comprehensive Investigation of Geometric Disorder of GaAs Surfaces by Complementary Methods. — 2000 // Укр. фіз. журн.
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Yoshichika Onuki de Haas - van Alphen effect and Fermi surface properties in rare earth and actinide compounds : (rev. art.). — 2012 // Физика низ. температур.
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| 4. |
Stanetska A. S. Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 4.
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Ptashchenko O. O. Effect of ammonia vapors on the surface current in silicon p - n junctions. — 2007 // Фотоэлектроника.
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Ptashchenko O. O. Effect of deep centers on the time-resolved surface current induced by ammonia molecules adsorption in GaAs p - n junctions // Фотоэлектроника : межвед. науч. сб. - 2014. - Вып. 23.
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| 7. |
Gal'chinetskii L. P. Effect of oxygen on some reactions of ZnSe crystal surface interaction with H2O vapors, CO2, and CO // Functional Materials. - 2012. - 19, № 4.
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| 8. |
Serdega B. K. Effect of surface condition on strain in semiconductor crystal sample // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 1.
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| 9. |
Kirillova S. I. Electronic properties of silicon surface at different oxide film conditions // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 1.
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| 10. |
Antonov V. N. Electronic structure, Fermi surface and dHvA effect in YIn3, LuIn3, and YbIn3 // Физика низ. температур. - 2014. - 40, N 4 (спец. вып.).
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| 11. |
Kurochka A. Features of ion-electronic emission from surface of semiconductors // Журн. нано- та електрон. фізики. - 2013. - 5, 4 (ч. 1).
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| 12. |
Rutkuniene Z. Formation of Multilayer Structures on the Silicon Surface after Etching in Plasma. — 2003 // Фізика і хімія твердого тіла.
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| 13. |
Kiv A. E. High-temperature configurations of dimers in Si (001) surface layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 1.
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| 14. |
Grinevych V. S. Influence of a precursor properties on the surface morphology of nanoscale tin dioxide films // Фотоэлектроника. - 2012. - Вып. 21.
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| 15. |
Lyashenko V. I. Influence of electrical field on sorption processes on germanium surface. — 2008 // Укр. фіз. журн.
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| 16. |
Lysiuk V. O. Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 2.
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| 17. |
Parfenyuk O. A. Influence of low-temperature annealing on the state of CdTe surface // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 3.
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| 18. |
Korolev A. N. Influence of processing methods on the surface morfology of the SiOx(SnOy) films for gas sensors applications. — 2006 // Сенсор. електрон. і мікросистем. технології.
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| 19. |
Smyntyna V. A. Influence of the surface on the spectrum of luminescence NC CdS in gelatine matrix // Фотоэлектроника. - 2012. - Вып. 21.
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| 20. |
Galiy P. V. Investigation of (100) In4Se3 crystal surface nanorelief // Functional Materials. - 2009. - 16, № 3.
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