Пошуковий запит: (<.>A=Kladko V$<.>) |
Загальна кількість знайдених документів : 34
Представлено документи з 1 до 20
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| 1. |
Kuchuk A. V. Effect of nitrogen in Та - Si - N thin films on properties and diffusion barrier performances. — 2005 // Металлофизика и новейшие технологии.
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| 2. |
Yefanov O. M. Dynamical theory of coplanar N-beam X-ray diffraction in multilayered structures. — 2006 // Укр. фіз. журн.
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| 3. |
Kladko V. P. Investigation of superlattice structure parameters by using quasi-forbidden reflections // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 3.
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| 4. |
Strelchuk V. V. Anisotropy of elastic straines in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 1.
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| 5. |
Belyaev A. E. Development of high-stable contact systems to gallium nitride microwave diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 4.
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| 6. |
Belyaev A. E. Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 3.
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| 7. |
Konakova R. V. Modification of properties of the glass - Si3N4 - Si - SiO2 structure at laser treatment // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2009. - 12, № 3.
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| 8. |
Gudymenko O. Yo. Influence of small miscuts on self-ordered growth of Ge nanoislands // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 4.
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| 9. |
Fodchuk I. M. Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 2.
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| 10. |
Belyaev A. E. The features of temperature dependence of contact resistivity of Au - Ti - Pd2Si - <$E bold p sup +>-Si ohmic contacts // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 1.
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| 11. |
Kladko V. P. X-ray diffraction study of deformation state in InGaN/GaN multilayered structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 1.
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| 12. |
Gamov D. V. Research of recombination characteristics of Cz-Si implanted with iron ions // Укр. фіз. журн.. - 2013. - 58, № 9.
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| 13. |
Klyui M. I. Bio-SiC ceramics coated with hydroxyapatite using gas-detonation deposition: an alternative to titanium-based medical implants // Functional Materials. - 2013. - 20, № 2.
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| 14. |
Kladko V. P. Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 4.
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| 15. |
Belyaev A. E. Ohmic contacts based on Pd to indium phosphide Gunn diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 3.
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| 16. |
Belyaev A. E. Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 4.
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| 17. |
Sabov T. M. Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 2.
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| 18. |
Liubchenko O. I. Modeling of X-ray rocking curves for layers after two-stage ion-implantation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 3.
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| 19. |
Korbutyak D. V. Synthesis, luminescent and structural properties of the Cd1-xCuxS and Cd1-xZnxS nanocrystals // Журн. нано- та електрон. фізики. - 2017. - 9, № 5.
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| 20. |
Lytovchenko V. G. Preparation and study of porous Si surfaces obtained using the electrochemical method // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 4.
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