Пошуковий запит: (<.>A=Kladko V$<.>) |
Загальна кількість знайдених документів : 34
Представлено документи з 1 до 20
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| 1. |
Strelchuk V. V. Anisotropy of elastic straines in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 1.
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| 2. |
Klyui M. I. Bio-SiC ceramics coated with hydroxyapatite using gas-detonation deposition: an alternative to titanium-based medical implants // Functional Materials. - 2013. - 20, № 2.
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| 3. |
Kladko V. P. Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 4.
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| 4. |
Belyaev A. E. Development of high-stable contact systems to gallium nitride microwave diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 4.
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| 5. |
Yefanov O. M. Dynamical theory of coplanar N-beam X-ray diffraction in multilayered structures. — 2006 // Укр. фіз. журн.
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| 6. |
Vashchenko V. A. Effect of electron-beam treatment of sensor glass substrates for SPR devices on their metrological characteristics // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 4.
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| 7. |
Vashchenko V. A. Effect of electron-beam treatment of sensor glass substrates for SPR devices on their metrological characteristics // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 4.
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| 8. |
Kuchuk A. V. Effect of nitrogen in Та - Si - N thin films on properties and diffusion barrier performances. — 2005 // Металлофизика и новейшие технологии.
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| 9. |
Borcha M. D. Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 4.
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| 10. |
Borcha M. D. Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 4.
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| 11. |
Belyaev A. E. Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 3.
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| 12. |
Bacherikov Yu. Yu. Influence of microwave radiation on relaxation processes in silicon carbide // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2020. - 23, № 2.
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| 13. |
Gudymenko O. Yo. Influence of small miscuts on self-ordered growth of Ge nanoislands // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 4.
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| 14. |
Molodkin V. B. Integrated dynamical phase-variation diffractometry of single crystals with defects of three and more types // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2023. - 26, № 1.
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| 15. |
Kladko V. P. Investigation of superlattice structure parameters by using quasi-forbidden reflections // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 3.
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| 16. |
Liubchenko O. I. Modeling of X-ray rocking curves for layers after two-stage ion-implantation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 3.
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| 17. |
Konakova R. V. Modification of properties of the glass - Si3N4 - Si - SiO2 structure at laser treatment // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2009. - 12, № 3.
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| 18. |
Gabovich A. M. Nanosized structure formation by trampoline ion-plasma sputtering // Наносистеми, наноматеріали, нанотехнології : зб. наук. пр. - 2020. - 18, вип. 2.
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| 19. |
Molodkin V. B. New possibilities for phase-variation structural diagnostics of multiparametrical monocrystalline systems with defects // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2021. - 24, № 1.
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| 20. |
Belyaev A. E. Ohmic contacts based on Pd to indium phosphide Gunn diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 3.
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