Пошуковий запит: (<.>U=В379.227$<.>) |
Загальна кількість знайдених документів : 245
Представлено документи з 1 до 20
|
| | |
| 1. |
Yaremiy I. P. Aging processes in films of iron-yttrium garnet implanted by boron ions // Фізика і хімія твердого тіла. - 2019. - 20, № 1.
|
| 2. |
Ostafiychuk B. K. Aging processes in implanted fluorine ions and laser irradiated films of LaGa:YIG // Фізика і хімія твердого тіла. - 2019. - 20, № 2.
|
| 3. |
Vasetskii V. M. Anisotropy and non-linearity of absorption of an intensive IR light by free electrons in germanium // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 3.
|
| 4. |
Smyrnov O. O. Broadband scattering of laser light by <$E bold {beta - roman {BaB sub 2 O sub 4}}> crystal pumped with femtosecond laser pulses. — 2010 // Укр. фіз. журн.
|
| 5. |
Gaidar G. P. Changes in Hall parameters after <$E bold gamma>-irradiation (<$E bold {nothing sup 60 roman Co}>) of n-Ge // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 3.
|
| 6. |
Zakharchuk D. A. Changing of the anisotropy parameter of mobility in n-Ge single crystals with heterogeneous distribution of doping impurity // Ядер. фізика та енергетика. - 2014. - 15, № 1.
|
| 7. |
Tetyorkin V. V. Conductivity type conversion in p-CdZnTe under pulsed laser irradiation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 3.
|
| 8. |
Masalov A. A. Control of energy storage of <$E bold roman {Lu sub 2 SiO sub 5 : Ce sup 3+}> nanocrystals by co-activation // Functional Materials. - 2007. - 14, № 3.
|
| 9. |
Antroshchenko L. V. Crystals Cd1-xZnxTe - a promising material for non-cryogenic semiconductor detectors: preparation, structure defectness and electrophysical properties // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 4.
|
| 10. |
Baumer V. N. Dependence of PbMoO4 crystal damage threshold on <$E bold roman Nd sup 3+> concentration and method of doping // Functional Materials. - 2010. - 17, № 4.
|
| 11. |
Dolgolenko A. P. Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 4.
|
| 12. |
Petchenko G. A. Dynamic damping of dislocations in the irradiated LiF crystals // Functional Materials. - 2012. - 19, № 4.
|
| 13. |
Garapyn I. V. Dynamics of relaxation processes in <$E bold gamma>-irradiated cesium iodide crystals doped with cation impurities. — 2006 // Укр. фіз. журн.
|
| 14. |
Ashok Rao Effect of electron beam irradiation on structural, electrical and thermo-electric power of La0,8Sr0,2MnO3 // Журн. нано- та електрон. фізики. - 2015. - 7, № 1.
|
| 15. |
Povarchuk V. Yu. Effect of ionizing radiation on magnetic properties and structure of Fe80Si6B14 amorphous alloy. — 2004 // Укр. фіз. журн.
|
| 16. |
Bacherikov Yu. Yu. Effect of microwave radiation on optical transmission spectra in SiO2/SiC structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 4.
|
| 17. |
Bataiev M. Effect of proton irradiation on AlGaN/AlN/GaN HEMTs // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 3.
|
| 18. |
Bataiev M. Effect of proton irradiation on the parameters of AlGaN/GaN HEMTs // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 4.
|
| 19. |
Virt І. S. Effect of thermal neutron irradiation effect on the electrophysical and photoelectrical properties of Hg0,8Cd0,2Te crystals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
|
| 20. |
Dotsenko Yu. P. Electro-physical properties of gamma-exposed crystals of silicon and germanium . — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
|
| | |
НОВІ
ПОШУК
Книжкові видання та компакт-диски
