Пошуковий запит: (<.>A=Ivanov V$<.>) |
Загальна кількість знайдених документів : 67
Представлено документи з 1 до 20
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| 1. |
Grandilevskaya A. B. Comparative study of nonhistone chromosomal pp23 protein in normal and tumor rat cells. — 2001 // Эксперим. онкология.
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| 2. |
Teryukova N. P. Inhibitory Effect of Polyclonal Antibodies against Tumor-Associated Membranous Heteroorganic Antigen MA-50 on DNA Synthesis in Cultured Rat Cells. — 1999 // Эксперим. онкология.
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| 3. |
Venger Ye. F. Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 4. |
Kryshtab T. G. TiB2/GaAs and Au - TiB2/GaAs structural transformations at short-term thermal treatment. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 5. |
Kostenko N. V. Experience of content analysis: models and practices : Monogr. — K., 2005. — 233 p.
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| 6. |
Ivanov V. A. Monitoring of the shelf zone ecosystem on the example of the Black Sea (Strategy and tactics of realization of the program of the Black Sea ecosystem investigation) : Monogr. — Sevastopol, 2004. — 141 p.
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| 7. |
Apryshko G. N. Mediterranean and Black Sea organisms and algae from mariculture as sources of antitumor drugs. — 2005 // Эксперим. онкология.
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| 8. |
Godlewski M. Mechanisms of radiative and nonradiative recombination in ZnSe:Cr and ZnSe:Fe. — 2004 // Физика низ. температур.
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| 9. |
Godlewski M. Mechanisms of enhancement of light emission in nanostructures of II - VI compounds doped with manganese. — 2007 // Физика низ. температур.
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| 10. |
Zakharov A. B. Electron correlations and <$E bold pi>-electron response properties for large conjugated systems. — 2010 // Вісн. Черкас. ун-ту. Сер. Хім. науки.
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| 11. |
Boltovets N. S. Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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| 12. |
Boltovets N. S. Technology and experimental studies of contacts for microwave diodes based on interstitial phases // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 2.
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| 13. |
Venger Ye. F. Effect of rapid thermal annealing on properties of contacts Au - Mo - TiBx - GaAs // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 3.
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| 14. |
Ivanov V. N. Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 3.
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| 15. |
Boltovets N. S. SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 1.
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| 16. |
Arsentyev I. N. New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 4.
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| 17. |
Belyaev A. E. Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 4.
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| 18. |
Arsentyev I. N. Porous nanostructured InP: technology, properties, application // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 4.
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| 19. |
Belyaev A. E. Development of high-stable contact systems to gallium nitride microwave diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 4.
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| 20. |
Belyaev A. E. Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 3.
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