Пошуковий запит: (<.>A=Stronski A$<.>) |
Загальна кількість знайдених документів : 25
Представлено документи з 1 до 20
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| 1. |
Stronski A. V. Image formation properties of As40S20Se40 thin layers in application for gratings fabrication. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 2. |
Stronski A. V. Optical elements for IR spectral region on the base of СhVS layers. — 2001 // Укр. фіз. журн.
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| 3. |
Stronski A. V. Raman spectra of Ag- and Cu- photodoped chalcogenide films. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 4. |
Blonsky I. Laser installation for the non-destructive control of devices on the 10 - 100 MHz surface acoustic waves. — 2010 // Сенсор. електрон. і мікросистем. технології.
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| 5. |
Stronski A. V. Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 2.
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| 6. |
Stronski A. V. Fourier Raman spectroscopy studies of the As40S60 - XSeX glasses // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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| 7. |
Stronski A. Photoinduced structural changes in As100 - хSх layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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| 8. |
Mateleshko N. Investigation of nanophase separation in IR optical glasses As40Se60 using resonant Raman scattering // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 2.
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| 9. |
Stronski A. V. Study of non-reversible photostructural transformations in <$E bold {roman {As sub 40 S} sub 60-x {roman Se} sub x}> layers applied for fabrication of holographic protective elements // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 3.
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| 10. |
Mateleshko N. Nano-sized phase inclusions in As2S3 glass, films and fibers based on this glass // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 4.
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| 11. |
Moskvin P. P. Polyassociative thermodynamical model of <$E bold roman {A sup 2 B sup 6}> semiconductor melt and phase equilibrium in Cd - Hg - Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd - Hg - Te system // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 2.
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| 12. |
Tolmachov I. D. Optical properties and structure of As - Ge - Se thin films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 3.
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| 13. |
Tolmachov I. D. Raman scattering in sulphide glasses // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 4.
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| 14. |
Paiuk A. P. Mid-IR impurity absorption in As2S3 chalcogenide glasses doped with transition metals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2012. - 15, № 2.
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| 15. |
Mateleshko N. Raman spectra of As - S(Se) glasses and sulfide (selenide) clusters // Functional Materials. - 2003. - 10, № 2.
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| 16. |
Tolmachov I. D. Optical properties of Ge - As - S thin films // Functional Materials. - 2009. - 16, № 1.
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| 17. |
Kamuz A. M. Optical properties of quantum-sized structures and two-dimensional photon crystals fabricated in semiconductor substrates using irreversible giant modification // Functional Materials. - 2008. - 15, № 4.
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| 18. |
Zayats M. S. Optical properties of AlN/n-Si(111) films obtained by method of HF reactive magnetron sputtering // Functional Materials. - 2010. - 17, № 2.
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| 19. |
Vlasenko O. I. Study of surface influence on the n-Ge(110) electroreflectance spectra and their polarization spectroscopy // Functional Materials. - 2009. - 16, № 3.
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| 20. |
Stronski A. V. Photoluminescence of As2S3 doped with Cr and Yb // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 4.
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